Grabin-HPN advances to stimulate new LEDs, quantum computing TOU

Grabin-HPN advances to stimulate new LEDs, quantum computing

 TOU

Grabin-HPN advances to stimulate new LEDs, quantum computing

Ping Wang, a postgraduate researcher in electrical engineering and computer science, tests samples of the monolayer hexagon boron nitride / graphene grown by the UltraHi Temperature MBE system. This is the first method of producing high-quality, scalable hexagonal boron nitride, and this discovery will accelerate research into the next generation of computer and LED devices. Credit: Brenda Ahearn / University of Michigan, College of Engineering, Communication and Marketing

In a breakthrough that could accelerate research into next-generation electronics and LED devices, a University of Michigan research team has developed the first reliable, scalable method for growing single layers of hexagonal boron nitrite in graphene.

The process by which large sheets of high-quality hBN can be formed with the widely used molecular-beam epitoxy process is described in one study. Advanced products.

Graphene-HPN structures power LEDs, which generate deep-ultraviolet light, which is not possible in today’s LEDs, said Jetian Mi, a professor of electrical engineering and computer science at UM, and the author of the study. Deep-UV LEDs can operate small size and high performance on a variety of devices including lasers and air purifiers.

“The technology used today to produce deep ultraviolet light is mercury-xenon lamps, which are hot, bulky, inefficient and toxic,” Mi said. “If that light could be generated by LEDs, we could see a performance revolution in ultraviolet devices like the one we saw when LED light bulbs replaced incandescent bulbs.”

Hexagon boron nitride is the thinnest insulator in the world, while graphene is the thinnest of a kind of material called semimetals, which have highly compatible electrical properties and are important for their role in computers and other electronics.

The binding of hBN and graphene into soft, single atom-thick layers unleashes a treasure trove of attractive properties. In addition to deep UV LEDs, graphene-hBN structures can be used to process quantum computing devices, portable and highly efficient electronics and optoelectronics, and a variety of applications.

“Researchers have known about the properties of hBN for many years, but in the past, the only way to obtain the thin sheets needed for research was to physically extract them from a large boron nitride crystal, which yields only laborious and small scales,” Mi said. “Our process can develop atomic-sized thin sheets of any size, which opens up many exciting new research possibilities.”

Credit: University of Michigan

Because graphene and hBN are so thin, they are used to make electronic devices that are much smaller and more energy efficient than they are today. HBN and graphene layer structures can exhibit attractive properties that can store information in quantum computing devices, such as the ability to switch from conductor to insulator or to support abnormal electron rotations.

Although researchers have tried in the past to integrate thin layers of hBN, they have struggled to obtain uniform, precisely arranged layers of atoms needed to bind exactly to the graphene layer.

“To get a useful product, you need stable, sequenced hBN atoms that are compatible with the graphene below, which previous attempts could not achieve,” said Ping Wang, a master researcher in electrical engineering and computer science. “Some hBN crashed nicely, but many parts were degraded and randomly aligned.”

A team of researchers in electrical engineering and computer science, material science, and engineering and physics found that the hierarchies of hBN atoms were more stable at higher temperatures than the undesired fractions. Armed with that knowledge, Wang began experimenting with molecular-beam epitaxy, an industrial process equivalent to spraying individual atoms on a single substrate.

Wang used a terrace graphene substrate — basically an atomic scale staircase — and heated it to about 1600 degrees Celsius before spraying on individual boron and active nitrogen atoms. By creating neatly lined hBN stitches on the edges of the graphene terrace, it exceeded the team’s expectations, expanding into ribbons of wider material.

“Experimenting with large-scale primitive hBN was a distant dream for many years, but this discovery changes that,” Mi said. “This is a huge step towards the commercialization of 2D quantum structures.”

This decision would not have been possible without the cooperation of various departments. Mathematical theory based on some work involving electrical engineering and computer science and material science and engineering researchers from UM and Yale University.

Mi’s lab developed the process, integrated the object and classified its interactions with light. Subsequently, materials scientists and engineers at UM and collaborators at Ohio State University studied its structure and electrical properties in detail.


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                                        Stretching alters the electronic properties of graphene
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                                                                                            <strong>More info:</strong>
                                            Scalable set of graphene monolayer hexagon boron nitrite, with giant bandcap restoration by Ping Wang et al. <i>Advanced products</i> (2022)  <a data-doi="1" href="https://dx.doi.org/10.1002/adma.202201387" target="_blank" rel="noopener">DOI: 10.1002 / adma.202201387</a>


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